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STMicroelectronics STP30N10F7 — Discrete Semiconductors

STP30N10F7 N-Channel MOSFET, 100V 32A TO-220

MPNSTP30N10F7
Obsolete

STMicroelectronics STripFET™ series, STP30N10F7, N-Channel MOSFET, 100 V Vdss, 32 A continuous drain, 24 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$1.6100Ref. price · indicative, final on quote
STMicroelectronics STP30N10F7 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP30N10F7 specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C32A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs19 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1270 pF @ 50 V

Product details

Key ratings for the power budget

The 100 V Vdss rating gives headroom for 48 V bus, 24 V industrial, and 12 V automotive rails. The 24 mΩ Rds(on) at 10 V gate drive translates to roughly 7.7 W conduction loss at 16 A, which is within the dissipation budget with adequate heatsinking. These are moderate values — a standard gate driver with 1 A to 2 A peak source/sink capability will switch this part in the tens of nanoseconds range. The threshold voltage is specified at 4.5 V maximum at 250 µA, so a 10 V gate drive is recommended for fully enhanced Rds(on); at 5 V drive the on-resistance will be significantly higher.

For new designs, a pin-compatible replacement from the same STripFET™ family should be evaluated.

Frequently asked questions

What is the STP30N10F7 equivalent or replacement?

A pin-compatible replacement from the same STripFET™ family should be evaluated for new designs. For existing BOM lines, the part is available through surplus and broker channels.