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STMicroelectronics STP2NK60Z — Discrete Semiconductors

ST STP2NK60Z N-Channel MOSFET, 600V, 1.4A, TO-220

MPNSTP2NK60Z
Obsolete

STMicroelectronics SuperMESH™ N-Channel MOSFET, 600V Vdss, 1.4A Id, 8Ohm Rds(on) @ 700mA, TO-220-3, -55°C~150°C TJ.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP2NK60Z specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.4A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs8Ohm @ 700mA, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds170 pF @ 25 V

Product details

600 V N-channel MOSFET for off-line power conversion

The STP2NK60Z is a 600 V N-channel MOSFET from ST's SuperMESH series, built with a proprietary technology that balances low gate charge and avalanche ruggedness.

8 Ohm Rds(on) — conduction loss in low-current rails

The 4.5 V gate threshold at 50 µA means a 10 V drive is needed to fully enhance the channel and achieve the rated Rds(on); a logic-level gate signal will not fully turn it on.

ST lists the STP2NK60Z as Obsolete. There is no LTB window to plan for; the part is already discontinued, so qualification of a replacement should be treated as a priority for any new production run.

Frequently asked questions

What is the replacement for STP2NK60Z?

ST has not published an official successor order code for the STP2NK60Z. For a pin-compatible alternative in the same TO-220 package, look for a 600 V N-channel MOSFET with similar Rds(on) and gate charge from ST's current SuperMESH or MDmesh families, or from competitors such as Infineon or Vishay. Qualification testing is recommended before substituting into a production BOM.

What is the Rds(on) of STP2NK60Z?

The maximum Rds(on) is 8 Ohms at a drain current of 700 mA and a gate-source voltage of 10 V.

What is the Vgs threshold of STP2NK60Z?

The maximum gate threshold voltage is 4.5 V at a drain current of 50 µA.