1000 V SuperMESH MOSFET in TO-220
The STP2NK100Z: The TO-220-3 through-hole package suits designs where the device is bolted to a heatsink or chassis — the tab is the drain, and the gate and source pins sit in a standard 100-mil pitch row. The 8.5 Ohm maximum on-resistance at 900 mA and 10 V gate drive sets the conduction loss floor; the 70 W package rating can handle the dissipation with adequate thermal management.
Input capacitance (Ciss) is 499 pF at 25 V drain-source, which together with the low gate charge means the gate-drive loop can be kept tight without excessive ringing. The gate threshold voltage is specified at 4.5 V maximum at 50 µA drain current, so a 10 V drive rail is recommended to fully enhance the channel and achieve the rated Rds(on).
Maximum gate-source voltage is ±30 V, so a 10 V gate drive with a negative bias for fast turn-off stays well within the safe operating area.