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STMicroelectronics STP2N95K5 — Discrete Semiconductors

STP2N95K5 MOSFET, N-Channel 950V 2A TO-220, Active

MPNSTP2N95K5
Active

STMicroelectronics SuperMESH5™ STP2N95K5, N-Channel MOSFET, 950V Vdss, 2A Id, 5 Ohm Rds(on) at 10V Vgs, 10 nC Qg, TO-220-3, -55°C to 150°C.

$1.5100Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP2N95K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds105 pF @ 100 V

Product details

950 V N-channel MOSFET for offline flyback and auxiliary supplies

The STP2N95K5: The 5 Ohm maximum on-resistance at 1 A and 10 V drive gives a conduction loss of about 5 W at 1 A — budget the thermal path for that dissipation through the TO-220 tab to a heatsink.

Input capacitance is 105 pF at 100 V drain bias — a low figure that contributes to fast switching edges and minimal cross-conduction losses in a half-bridge topology.

Temperature range and thermal limits

Maximum power dissipation is 45 W at the case, but the actual safe operating area depends on the heatsink and ambient — the 150°C junction ceiling is the hard limit for thermal design.

Frequently asked questions

Is STP2N95K5 RoHS compliant?

Yes, it is ROHS3 compliant, meeting the latest EU lead-free directive requirements.