Its 620 V drain-source voltage rating (Vdss) places it in the 600 V class, suitable for offline power supplies, flyback converters, and lighting ballasts where the DC bus can reach 400 V plus ringing margin.
For BOM lines that still specify this exact order code, procurement must turn to the surplus and broker channel. Any buyer evaluating a new design should select a current-production 600 V N-channel MOSFET in TO-220 from the SuperMESH3 or equivalent family instead.
With a maximum gate charge of 15 nC at 10 V and input capacitance of 340 pF at 50 V drain-source, the STP2N62K3 presents a light load to the gate driver. This translates to fast switching transitions and low drive losses — a practical advantage in medium-frequency converters where the switching edge is not the dominant loss term. The 4.5 V gate threshold at 50 µA drain current means a 10 V drive is needed to achieve the rated on-resistance; logic-level 5 V drive will not fully enhance the channel.
