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STP2N105K5

STMicroelectronics · MDmesh™ K5 Series

STMicroelectronics MDmesh K5 series, N-Channel MOSFET, 1050 V drain-source, 1.5 A continuous drain, 8 Ohm Rds(on) at 750 mA, 10 V gate drive, 10 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STP2N105K5
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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

STP2N105K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1050 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C1.5A (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs8Ohm @ 750mA, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds115 pF @ 100 V

Technical details

8 Ohm Rds(on) — conduction loss at low current

The STP2N105K5 has 8 Ohm maximum on-resistance at 750 mA and 10 V gate drive. Gate charge is only 10 nC at 10 V, so a simple gate driver or even a microcontroller PWM output can switch it at moderate frequencies without excessive drive current.

Junction temperature range and package

Housed in a TO-220-3 through-hole package with the tab as the drain, it mounts to a heatsink via the mounting hole — the thermal pad area under the tab sets the junction-to-case thermal resistance.

It is ROHS3 compliant with no exemptions.

STP2N105K5
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