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STMicroelectronics STP28NM60ND — Discrete Semiconductors

STP28NM60ND MOSFET, N-Ch 600V 23A TO-220

MPNSTP28NM60ND
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STMicroelectronics STP28NM60ND, FDmesh™ II series, N-Channel MOSFET, 600V Vdss, 23A Id, 150mOhm Rds(on), TO-220-3, Through Hole, Tube.

$6.7600Ref. price · indicative, final on quote
STMicroelectronics STP28NM60ND datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesFDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP28NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C23A (Tc)
Power dissipation190W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs150mOhm @ 11.5A, 10V
Gate charge (Qg) (Max) @ vgs62.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2090 pF @ 100 V

Product details

600 V, 23 A, 150 mOhm — where this FDmesh™ II MOSFET fits

The STP28NM60ND: The 5 V maximum gate threshold at 250 µA confirms the part turns on with standard 10 V logic-level drive, but the ±25 V max gate-source rating gives headroom for gate-drive overshoot in hard-switching topologies.

Package and thermal integration

The TO-220 through-hole package (TO-220-3 case code) is the standard medium-power vertical MOSFET format — the metal tab is the drain, and the two parallel leads are source and gate.