600 V, 24 A N-channel — MDmesh™ II Plus for hard-switched power
Gate charge totals 37 nC at 10 V.
Maximum power dissipation is 170 W at the case.
Input capacitance and drive considerations
Input capacitance (Ciss) is 1370 pF at 100 V drain-source.
STP28N60M2
STMicroelectronics · MDmesh™ II Plus Series
STMicroelectronics MDmesh™ II Plus series, STP28N60M2, N-Channel MOSFET, 600 V Vdss, 24 A Id, 150 mOhm Rds(on) at 10 V, 37 nC Qg, TO-220-3, -55 to 150 °C junction.
[IN STOCK] In Stock: 500 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Tc) |
| Power dissipation | 170W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 37 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1370 pF @ 100 V |
Technical details
STP28N60M2
[ALLOC] verified