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STMicroelectronics STP28N60DM2 — Discrete Semiconductors

STP28N60DM2 N-Channel MOSFET, 600V 21A TO-220

MPNSTP28N60DM2
Active

STMicroelectronics STP28N60DM2, MDmesh DM2 series, N-Channel MOSFET, 600 Vdss, 21 A Id, 160 mOhm Rds(on) at 10 V, 34 nC Qg, TO-220-3, -55 to 150 °C junction.

$3.7500Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP28N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 100 V

Product details

600 V N-channel — where it lands in a power stage

The STP28N60DM2: It comes in a TO-220-3 through-hole package, which bolts to a heatsink or chassis for thermal management.

At 160 mOhm max with 10 V gate drive, the STP28N60DM2's on-resistance is competitive for a 600 V, 21 A class part in a TO-220. The 34 nC total gate charge at 10 V means a standard gate-driver IC (e.g., 1 A peak source/sink) can switch it at 100 kHz with under 4 mA average drive current — no external booster needed. Input capacitance is 1500 pF at 100 V drain-source, which keeps the Miller plateau manageable for a simple RC gate-drive network.

Thermal budget in a real enclosure

The 170 W maximum power dissipation at case temperature assumes an infinite heatsink — in practice, a TO-220 bolted to a 5 °C/W heatsink in still air at 50 °C ambient will dissipate about 20–25 W before the junction hits 125 °C. The 21 A continuous rating at 25 °C case derates to roughly 13 A at 100 °C case (following the typical 0.65× derating for a 100 °C rise).

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of STP28N60DM2?

Maximum on-resistance is 160 mOhm at 10.5 A drain current with 10 V gate-source drive.