STMicroelectronics MDmesh M2-EP series, N-Channel MOSFET, STP27N60M2-EP, 600 V Vdss, 20 A Id, 163 mOhm Rds(on), 33 nC Qg, TO-220-3, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2-EP |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 170W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 163mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 33 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1320 pF @ 100 V |
The 163 mOhm maximum on-resistance at 10 A gate drive sets the conduction loss floor for a 600 V-class device in a TO-220 through-hole package.
STMicroelectronics lists the STP27N60M2-EP as Obsolete.
The TO-220-3 through-hole package with a metal tab requires a heatsink for continuous operation above a few watts — the 170 W maximum power dissipation assumes the case is held at 25 °C.
For a pin-compatible replacement within the MDmesh M2-EP family, consult the STP27N60 series base part number — the M2-EP variants share the same TO-220 footprint and 600 V rating. Sourcing through independent distribution remains the primary channel for this specific order code.