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STMicroelectronics STP270N8F7 — Discrete Semiconductors

STP270N8F7 MOSFET, N-Channel 80V 180A TO-220

MPNSTP270N8F7
Active

STMicroelectronics DeepGATE™, STripFET™ VII series STP270N8F7, N-Channel MOSFET, 80V Vdss, 180A Id at 25°C, 2.5mOhm Rds(on) at 10V, 193nC Qg, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$5.9500Ref. price · indicative, final on quote
STMicroelectronics STP270N8F7 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesDeepGATE™, STripFET™ VII
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP270N8F7 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VII
FET typeN-Channel
MountingThrough Hole
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C180A (Tc)
Power dissipation315W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs2.5mOhm @ 90A, 10V
Gate charge (Qg) (Max) @ vgs193 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13600 pF @ 50 V

Product details

Through-hole TO-220 — rework-friendly, easy to heatsink

The TO-220-3 package is a through-hole part with a metal tab for bolting to a heatsink. The 315 W maximum power dissipation at case temperature assumes a good thermal interface — a thermal pad or grease and a properly torqued screw. No special reflow profile needed; hand-solder or wave-solder with standard leaded or lead-free process.

Active production — no LTB risk on this BOM line

The STP270N8F7 carries an Active product status with ROHS3 compliance. No end-of-life notice or last-time-buy window is in effect.

Frequently asked questions

What is the Rds(on) of STP270N8F7?

The maximum Rds(on) is 2.5 mOhm at 90 A drain current with a 10 V gate-to-source voltage. This is the on-resistance that determines conduction loss in the channel.