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STMicroelectronics STP26NM60N — Discrete Semiconductors

STP26NM60N N-Channel MOSFET, 600 V, 20 A, TO-220

MPNSTP26NM60N
Active

STMicroelectronics MDmesh™ II, N-Channel MOSFET, STP26NM60N, 600 V Vdss, 20 A Id, 165 mOhm Rds(on) at 10 V, 60 nC Qg, TO-220-3, Through Hole, 150 °C Tj.

$6.1200Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP26NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation140W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs165mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1800 pF @ 50 V

Product details

600 V, 20 A — the TO-220 power switch for offline converters

Total gate charge is 60 nC at 10 V. The driver must supply the average current needed at the target switching frequency.

The junction temperature rating of 150 °C is the absolute ceiling.

Frequently asked questions

What is the difference between STP26NM60N and STP25NM60N?

Both are 600 V N-channel MOSFETs in the MDmesh II family. The STP26NM60N is rated for 20 A continuous drain current and 165 mOhm Rds(on), while the STP25NM60N is a lower-current variant. The exact current and on-resistance ratings of the STP25NM60N are not in this record; the key difference is the current class.