600 V, 20 A — the TO-220 power switch for offline converters
Total gate charge is 60 nC at 10 V. The driver must supply the average current needed at the target switching frequency.
The junction temperature rating of 150 °C is the absolute ceiling.
STP26NM60N
STMicroelectronics · MDmesh™ II Series
STMicroelectronics MDmesh™ II, N-Channel MOSFET, STP26NM60N, 600 V Vdss, 20 A Id, 165 mOhm Rds(on) at 10 V, 60 nC Qg, TO-220-3, Through Hole, 150 °C Tj.
[IN STOCK] In Stock: 706 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 165mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 50 V |
Technical details
STP26NM60N
[ALLOC] verified