600 V, 20 A — the TO-220 power switch for offline converters
Total gate charge is 60 nC at 10 V. The driver must supply the average current needed at the target switching frequency.
The junction temperature rating of 150 °C is the absolute ceiling.

STMicroelectronics MDmesh™ II, N-Channel MOSFET, STP26NM60N, 600 V Vdss, 20 A Id, 165 mOhm Rds(on) at 10 V, 60 nC Qg, TO-220-3, Through Hole, 150 °C Tj.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 165mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 50 V |
Total gate charge is 60 nC at 10 V. The driver must supply the average current needed at the target switching frequency.
The junction temperature rating of 150 °C is the absolute ceiling.
Both are 600 V N-channel MOSFETs in the MDmesh II family. The STP26NM60N is rated for 20 A continuous drain current and 165 mOhm Rds(on), while the STP25NM60N is a lower-current variant. The exact current and on-resistance ratings of the STP25NM60N are not in this record; the key difference is the current class.