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STMicroelectronics STP26N60M2 — Discrete Semiconductors

STP26N60M2 MOSFET, N-Channel 600 V 20 A TO-220-3

MPNSTP26N60M2
Active

STMicroelectronics MDmesh™ M2 series, N-Channel MOSFET, 600 V drain-to-source voltage, 20 A continuous drain current at 25°C, 169 W power dissipation, TO-220-3 through-hole package.

$1.4366Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP26N60M2 specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation169W (Tc)
PackageTube
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3

Product details

600 V N-Channel MOSFET for switched-mode power conversion

The STP26N60M2: It comes in a TO-220-3 through-hole package, the standard footprint for medium-power through-hole assembly with a single mounting hole for a heatsink. The MDmesh M2 technology targets the efficiency sweet spot in hard-switching and resonant topologies, where the combination of low on-resistance and reduced gate charge keeps switching losses manageable without exotic drive circuitry.

169 W dissipation — heatsink planning

The STP26N60M2 has a maximum power dissipation of 169 W referenced to case temperature. For a 20 A continuous load, a heatsink is required.

Frequently asked questions

What is the maximum power dissipation of STP26N60M2?

The maximum power dissipation is 169 W, referenced to the case temperature (Tc). This rating assumes adequate heatsinking and is the absolute limit at 25°C case temperature — derating applies at higher case temperatures.