600 V, 18 A N-channel power MOSFET for high-efficiency switching
On-resistance and gate charge — the efficiency trade-off
The 24 nC gate charge is notably low for a 600 V, 18 A device, which reduces the energy lost per switching cycle and allows a smaller gate-drive transformer or bootstrap supply. Compared to the earlier MDmesh™ M2 generation (STP26N60M2), the DM6 series typically offers a 20–30% reduction in gate charge for a similar Rds(on), translating to lower drive power and faster switching transitions — a meaningful improvement in high-frequency designs.
Package and mounting — TO-220-3 through-hole
Housed in the standard TO-220-3 through-hole package, the STP26N60DM6 mounts to a heatsink via the metal tab. The three-lead layout is industry-standard, compatible with existing PCB footprints and heatsink clips. The junction-to-case thermal path dominates; a well-greased TO-220 to a 3–5°C/W heatsink keeps the die below 125°C at full load.
This is a standard-catalog MOSFET, not a legacy or NRND line, so lead times and allocation risk are typical for the 600 V discrete segment. No LTB or obsolescence risk for new designs.