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STMicroelectronics STP26N60DM6 — Discrete Semiconductors

STP26N60DM6 N-Channel MOSFET, 600 V, 18 A, TO-220-3

MPNSTP26N60DM6
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STMicroelectronics MDmesh™ DM6 series, STP26N60DM6, N-Channel MOSFET, 600 V Vdss, 18 A continuous drain, 195 mOhm Rds(on) at 9 A, 10 V, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$4.0500Ref. price · indicative, final on quote
STMicroelectronics STP26N60DM6 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP26N60DM6 specifications
ParameterValue
SeriesMDmesh™ DM6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation130W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs195mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds940 pF @ 100 V

Product details

600 V, 18 A N-channel power MOSFET for high-efficiency switching

On-resistance and gate charge — the efficiency trade-off

The 24 nC gate charge is notably low for a 600 V, 18 A device, which reduces the energy lost per switching cycle and allows a smaller gate-drive transformer or bootstrap supply. Compared to the earlier MDmesh™ M2 generation (STP26N60M2), the DM6 series typically offers a 20–30% reduction in gate charge for a similar Rds(on), translating to lower drive power and faster switching transitions — a meaningful improvement in high-frequency designs.

Package and mounting — TO-220-3 through-hole

Housed in the standard TO-220-3 through-hole package, the STP26N60DM6 mounts to a heatsink via the metal tab. The three-lead layout is industry-standard, compatible with existing PCB footprints and heatsink clips. The junction-to-case thermal path dominates; a well-greased TO-220 to a 3–5°C/W heatsink keeps the die below 125°C at full load.

This is a standard-catalog MOSFET, not a legacy or NRND line, so lead times and allocation risk are typical for the 600 V discrete segment. No LTB or obsolescence risk for new designs.

Frequently asked questions

What is the closest pin-compatible alternative to STP26N60DM6?

The STP26N60M2 from the earlier MDmesh™ M2 series is a direct TO-220-3 pin-compatible alternative. The DM6 variant offers lower gate charge for better switching performance, but both share the same footprint and 600 V / 18 A rating.

Is STP26N60DM6 RoHS compliant?

The STP26N60DM6 is manufactured by STMicroelectronics and is RoHS compliant by design, as is standard for the MDmesh™ DM6 series. No separate RoHS certificate is required for procurement.