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STMicroelectronics STP260N6F6 — Discrete Semiconductors

STP260N6F6 N-Channel MOSFET, 60V 120A TO-220, Obsolete

MPNSTP260N6F6
Obsolete

STMicroelectronics STP260N6F6 N-Channel MOSFET, DeepGATE™, STripFET™ VI series, 60 V Vdss, 120 A Id, 3 mOhm Rds(on) at 60 A, 10 V, TO-220-3 through-hole package.

$2.6600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP260N6F6 specifications
ParameterValue
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs183 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds11400 pF @ 25 V

Product details

That means no further production runs from the factory — no last-time-buy window remains open.

Package and mounting — through-hole TO-220

Three leads, metal tab for heatsinking — the same footprint as any TO-220 MOSFET.

Frequently asked questions

What is the replacement for STP260N6F6?

STMicroelectronics has not published an official direct replacement order code for the STP260N6F6. For a new design, look at current-generation N-channel MOSFETs in the same 60 V, 120 A class with a TO-220 package and similar Rds(on) — for example, parts from the STripFET F7 or F8 series, or comparable offerings from Infineon (OptiMOS) or Nexperia. Verify pin compatibility and gate drive requirements before substituting.

Can STP260N6F6 be used in high power applications?

The 300 W power dissipation rating at case temperature requires a proper heatsink and thermal management to keep the junction within the -55 °C to 175 °C operating range.