That means no further production runs from the factory — no last-time-buy window remains open.
Package and mounting — through-hole TO-220
Three leads, metal tab for heatsinking — the same footprint as any TO-220 MOSFET.

STMicroelectronics STP260N6F6 N-Channel MOSFET, DeepGATE™, STripFET™ VI series, 60 V Vdss, 120 A Id, 3 mOhm Rds(on) at 60 A, 10 V, TO-220-3 through-hole package.
| Parameter | Value |
|---|---|
| Series | DeepGATE™, STripFET™ VI |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 183 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 11400 pF @ 25 V |
That means no further production runs from the factory — no last-time-buy window remains open.
Three leads, metal tab for heatsinking — the same footprint as any TO-220 MOSFET.
STMicroelectronics has not published an official direct replacement order code for the STP260N6F6. For a new design, look at current-generation N-channel MOSFETs in the same 60 V, 120 A class with a TO-220 package and similar Rds(on) — for example, parts from the STripFET F7 or F8 series, or comparable offerings from Infineon (OptiMOS) or Nexperia. Verify pin compatibility and gate drive requirements before substituting.
The 300 W power dissipation rating at case temperature requires a proper heatsink and thermal management to keep the junction within the -55 °C to 175 °C operating range.