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STMicroelectronics STP25NM60ND — Discrete Semiconductors

STP25NM60ND N-Channel MOSFET, 600 V, 160 mOhm, TO-220

MPNSTP25NM60ND
Obsolete

STMicroelectronics FDmesh™ II, STP25NM60ND, N-Channel MOSFET, 600 V Vdss, 160 mOhm Rds(on) @ 10.5 A, 10 V, 21 A Id, 160 W Pd, TO-220-3 through hole, ±25 V Vgs(max).

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP25NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation160W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 50 V

Product details

600 V N-channel in a TO-220 – the STP25NM60ND

The STMicroelectronics STP25NM60ND is a 600 V N-channel power MOSFET from the FDmesh™ II series, built with a planar stripe layout that reduces on-resistance and gate charge.

Obsolete – no official successor listed

Date-code provenance matters here; when sourcing, request traceable stock from a known production window.

160 mOhm Rds(on) and 80 nC gate charge – the switching trade-off

The 80 nC gate charge is moderate for this voltage class – it keeps the driver burden manageable with a standard 1 A gate driver, but at switching frequencies above 100 kHz the 2400 pF input capacitance (at 50 V Vds) will dominate the transition losses. For a replacement search, look for a 600 V N-channel in TO-220 with Rds(on) at or below 160 mOhm and a similar gate charge profile.

Frequently asked questions

Is STP25NM60ND obsolete?

Yes, the STP25NM60ND is listed as Obsolete. No official successor has been announced. Sourcing is through independent distribution – we can quote available stock against an RFQ.

What is the replacement or equivalent for STP25NM60ND?

No official replacement is listed by STMicroelectronics. For a pin-compatible alternative, look for a 600 V N-channel MOSFET in TO-220-3 with a similar Rds(on) around 160 mOhm and gate charge near 80 nC. We can help identify cross-reference candidates when you submit an RFQ.

What are the specifications of STP25NM60ND (Rds(on), Vgs, package)?

It is rated for 21 A continuous drain current and 160 W power dissipation. The package is TO-220-3 through hole, with a maximum gate-source voltage of ±25 V and a gate charge of 80 nC at 10 V.