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STMicroelectronics STP25NM60N — Discrete Semiconductors

STP25NM60N N-Channel MOSFET, 600V, 21A, MDmesh II, TO-220

MPNSTP25NM60N
Obsolete

STMicroelectronics STP25NM60N, N-Channel MOSFET, MDmesh™ II series, 600 V Vdss, 21 A Id, 160 mOhm Rds(on) at 10 V, TO-220-3 package, Through Hole.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP25NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation160W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs84 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2400 pF @ 50 V

Product details

STMicroelectronics lists the STP25NM60N as Obsolete. Stock that surfaces should be date-code checked and preferably from a known production date window; mystery lots with no provenance carry a higher counterfeit risk on an obsolete device.

Key ratings for the switching design

The 600 V Vdss gives a comfortable derating margin for universal-input (85–265 VAC) PFC stages where the bulk rail sits around 400 VDC. Input capacitance is 2400 pF at 50 V drain bias, which is moderate for this voltage class.

Frequently asked questions

What is the replacement for STP25NM60N?

No official replacement order code is listed by STMicroelectronics. A functional replacement requires a 600 V N-channel MOSFET in TO-220 with similar Rds(on) and gate charge. The STP25NM60N uses MDmesh II super-junction technology, so a modern MDmesh V or MDmesh K5 part from ST, or an equivalent from Infineon's CoolMOS series, would be the starting point for a parametric cross — but each candidate must be validated for gate-drive voltage, switching speed, and thermal performance in the specific application.