STP25N60M2-EP N-channel MOSFET, 600 V Vdss, 18 A Id, 188 mOhm Rds(on) at 10 V, TO-220-3 through-hole.
On-resistance, gate charge, and the thermal budget
The 29 nC total gate charge at 10 V keeps gate-drive losses modest in hard-switched topologies — a 100 kHz switching frequency draws about 2.9 mA average from the driver, well within a standard gate-driver IC's capability. The 150 W power dissipation at the case is the package limit, but the real thermal headroom depends on your heatsink and ambient. The -55 to 150 °C junction range covers industrial and military-temperature environments; the 150 °C Tj(max) is the derating ceiling for the 150 W Pd figure. Input capacitance is 1090 pF at 100 V drain — a moderate number that does not force an oversized gate resistor to tame ringing, but still benefits from a gate-loop layout with a low-inductance return path.
ROHS3 compliant.
The TO-220 through-hole package ships in Tube form.