STP25N10F7 — 100 V, 25 A N-channel MOSFET in TO-220
The STMicroelectronics STP25N10F7 is an N-channel power MOSFET built on the DeepGATE™ and STripFET™ VII process technology, housed in a through-hole TO-220 package.
The 100 V Vdss rating provides adequate derating margin for 48 V bus architectures common in telecom rectifiers and battery-powered industrial equipment, and can handle 60 V systems with reduced headroom. Gate charge of 14 nC at 10 V is notably low for a 100 V / 25 A device, which keeps switching losses manageable and reduces the drive current required from the gate driver. Input capacitance of 920 pF at 50 V Vds further confirms the switching speed potential — this part can be driven effectively by standard MOSFET gate drivers without excessive crossover conduction. The gate threshold is specified at 4.5 V maximum at 250 µA, so 5 V logic-level drive will turn the device on but with higher on-resistance than the 10 V rated figure.
Package and mounting — TO-220 through-hole
The STP25N10F7 comes in the standard TO-220-3 through-hole package (also designated as supplier device package TO-220). This is the workhorse power package for heatsink attachment — the metal tab provides the drain connection and the primary thermal path. For full 25 A continuous operation, the tab must be bolted to a heatsink with thermal interface material; the 50 W maximum power dissipation assumes adequate heatsinking. The through-hole leads suit wave-solder assembly and manual rework environments.
Lifecycle status — obsolete, sourced through independent channels
This means STMicroelectronics has discontinued production and no further factory orders are accepted. The part is no longer available through the standard authorized distribution channel for new designs.