STMicroelectronics MDmesh™ II series, STP24NM65N, N-Channel MOSFET, 650 V Vdss, 19 A Id, 190 mOhm Rds(on) @ 9.5 A/10 V, 70 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 19A (Tc) |
| Power dissipation | 160W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 9.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 70 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2500 pF @ 50 V |
The STP24NM65N: The 190 mOhm Rds(on) maximum at 9.5 A and 10 V Vgs defines the conduction loss at rated current. The 160 W maximum power dissipation (Tc) provides headroom but demands a properly sized heatsink.
The STP24NM65N is marked obsolete by STMicroelectronics. The last-time-buy window has closed, and the part is no longer available through the factory. Supply is limited to surplus and broker channels.
STMicroelectronics has not published an official direct replacement for the STP24NM65N. A pin-compatible N-channel MOSFET from the same MDmesh II family with a 650 V drain-source rating and similar Rds(on) and gate charge should be evaluated for new designs. Qualification testing is recommended before committing the BOM line.
The maximum on-resistance is 190 mOhm at a drain current of 9.5 A and a gate-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in the thermal design.