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STMicroelectronics STP24NM60N — Discrete Semiconductors

STP24NM60N N-Channel MOSFET, 600 V, 17 A, TO-220

MPNSTP24NM60N
Active

STMicroelectronics MDmesh™ II Series, N-Channel MOSFET, 600 V Vdss, 17 A Id, 190 mOhm Rds(on) @ 8 A, 10 V, TO-220-3, Through Hole, -55°C to 150°C junction.

$3.3300Ref. price · indicative, final on quote
STMicroelectronics STP24NM60N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP24NM60N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs46 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 50 V

Product details

600 V, 17 A N-channel — MDmesh II in a TO-220

The STP24NM60N: The TO-220-3 through-hole package suits offline power supplies, PFC stages, motor drives, and lighting ballasts.

At 17 A the Rds(on) will be higher (the curve is not flat), so budget derating for the actual operating current. Gate charge is 46 nC at 10 V — modest enough that a standard half-bridge driver can switch it without excessive cross-conduction loss.

The 125 W power dissipation at case temperature gives a rough thermal budget — with a TO-220 bolted to a heatsink, you can push continuous power before junction hits 125°C in a 50°C ambient.

Active lifecycle — still a current production part

For a field-service kit, this is a part you can stock with confidence — it will be around for the next few years.

Frequently asked questions

What is the Rds(on) of STP24NM60N?

This is the spec to use for conduction-loss calculations in a typical SMPS or motor-drive application.