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STMicroelectronics STP24NF10 — Discrete Semiconductors

STP24NF10 N-Channel MOSFET, 100V 26A TO-220

MPNSTP24NF10
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STMicroelectronics STripFET™ II STP24NF10, N-Channel MOSFET, 100V Vdss, 26A Id, 60mOhm Rds(on) @ 10V, 41nC Qg, TO-220-3, -55°C to 175°C.

$1.6900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP24NF10 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C26A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds870 pF @ 25 V

Product details

100 V N-channel MOSFET in a TO-220 package

The 41 nC typical gate charge keeps switching losses manageable in hard-switched topologies.

This headroom matters when the MOSFET sits near a hot heatsink in a sealed enclosure or sees transient overloads.

Gate drive and switching considerations

Input capacitance is 870 pF at 25 V drain-source, which is modest; the 41 nC gate charge means a typical MCU GPIO cannot drive it directly, but a small gate driver IC handles the switching without excessive cross-conduction.

For volume requirements or date code holds, submit an RFQ — the supply channel is open and the part is not restricted to authorized-only allocation.

Frequently asked questions

What is the closest equivalent or replacement for the STP24NF10?

The STP24NF10 is from the STripFET™ II family with a 100 V, 26 A, 60 mOhm rating in TO-220. Other 100 V N-channel MOSFETs in TO-220 from STMicroelectronics or competitors with similar Rds(on) and gate charge may serve as functional equivalents, but pin compatibility and thermal performance should be verified against the specific application requirements.