100 V N-channel MOSFET in a TO-220 package
The 41 nC typical gate charge keeps switching losses manageable in hard-switched topologies.
This headroom matters when the MOSFET sits near a hot heatsink in a sealed enclosure or sees transient overloads.
Gate drive and switching considerations
Input capacitance is 870 pF at 25 V drain-source, which is modest; the 41 nC gate charge means a typical MCU GPIO cannot drive it directly, but a small gate driver IC handles the switching without excessive cross-conduction.
For volume requirements or date code holds, submit an RFQ — the supply channel is open and the part is not restricted to authorized-only allocation.