600 V N-channel MDmesh™ M6 in a TO-220
The STP24N60M6 is an N-channel power MOSFET from STMicroelectronics' MDmesh™ M6 series, rated for 600 V drain-to-source voltage and 17 A continuous drain current at 25°C junction temperature.
Switching and drive characteristics
Gate charge is 23 nC at 10 V, which is low for a 600 V, 17 A MOSFET. That means the gate driver does not need to supply much energy per switching cycle — a practical advantage when driving the part from a PWM controller with limited drive current or when minimising switching losses in a hard-switched topology like a flyback or PFC boost stage. Input capacitance is 960 pF at 100 V drain-source, so the gate rise time stays short even with modest gate resistance.
The operating junction temperature range spans -55°C to 150°C, which covers industrial motor-drive enclosures, outdoor telecom rectifiers, and under-hood automotive environments where ambient heat plus self-heating can push junction temperatures well above 100°C.
It is ROHS3 compliant.