600 V, 18 A switching — what the ratings mean for the BOM
The STP24N60M2 is a 600 V drain-source, 18 A continuous-drain N-channel MOSFET from ST's MDmesh™ II Plus series — a super-junction family designed to cut conduction and switching losses in high-voltage offline converters, PFC stages, and flyback topologies. Input capacitance is 1060 pF at 100 V drain bias — this governs the switching speed and the driver's peak current requirement. The 4 V typical threshold at 250 µA provides noise margin against spurious turn-on in a half-bridge leg.
TO-220 package and thermal integration
The through-hole TO-220-3 package is the workhorse for single-ended power stages up to 150 W. The tab is the drain — a standard heatsink with a TO-220 clip or screw mount is expected. Drive voltage is specified at 10 V for minimum Rds(on), and the gate is rated to ±25 V maximum — a standard 12-15 V gate-driver supply is safe, and a 15 V Zener clamp across the gate-source is common practice in noisy environments.