STMicroelectronics FDmesh™ II Plus series, STP24N60DM2, N-Channel MOSFET, 600 V Vdss, 18 A Id @ 25°C, 200 mOhm Rds(on) @ 9 A, 10 V, 29 nC Qg @ 10 V, TO-220-3 through-hole, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | FDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 200mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 29 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1055 pF @ 100 V |
It comes in a TO-220-3 through-hole package — the kind you can swap on site with a screwdriver and a heatsink compound, no hot-air station needed.
That 10 V drive voltage is the spec condition — if your gate driver only swings 5 V, you will not hit the rated Rds(on) and the part runs hotter. The typical value is 0.175 Ohm, which is the number for loss calculations at 25°C junction.
The STP24N60DM2 belongs to the FDmesh™ II Plus series, which typically offers lower gate charge and faster switching compared to the earlier FDmesh™ II (STP24N60M2). The DM2 variant is optimised for higher efficiency in hard-switching topologies like PFC and LLC converters.