100 V, 180 A N-channel — where the 3.2 mOhm Rds(on) matters
The STP240N10F7 is an STMicroelectronics N-channel power MOSFET from the DeepGATE and STripFET VII generation. This Rds(on) figure is the key efficiency spec: at 60 A load, conduction loss is under 12 W at 25 °C junction, though the actual loss climbs with temperature per the normalised curve.
The 4.5 V maximum gate threshold at 250 µA drain means a 10 V drive is needed to achieve the rated Rds(on); a 5 V logic-level drive will not fully enhance this part.
Thermal and temperature grade — -55 to 175 °C junction
Maximum power dissipation is 300 W at the case, but the practical limit depends on the heatsink and airflow. The TO-220's junction-to-case thermal resistance is low; the bottleneck is getting the heat out of the tab into the heatsink or PCB copper.
Sourcing — active production, no LTB on the horizon
It is ROHS3 compliant.