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STMicroelectronics STP23NM60ND — Discrete Semiconductors

STP23NM60ND N-Channel MOSFET, 600 V, 19.5 A, FDmesh™ II

MPNSTP23NM60ND
Obsolete

STMicroelectronics FDmesh™ II STP23NM60ND, N-Channel MOSFET, 600 V Vdss, 19.5 A Id, 180 mOhm Rds(on) at 10 V, TO-220-3 through-hole package.

$3.1200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP23NM60ND specifications
ParameterValue
SeriesFDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C19.5A (Tc)
Power dissipation150W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs69 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2100 pF @ 50 V

Product details

600 V N-channel MOSFET in the FDmesh™ II family

The STP23NM60ND: It is rated for a drain-to-source voltage of 600 V and a continuous drain current of 19.5 A at a case temperature of 25°C.

Key ratings for the BOM decision

The 600 V drain-source breakdown voltage suits power-factor-correction stages, flyback converters, and two-switch forward topologies in off-line supplies. The 19.5 A continuous drain rating at 25°C case temperature must be derated as the case temperature rises; the maximum junction temperature is 150°C.

Obsolete — plan the replacement now

For a production BOM, you will need to qualify a replacement. The official successor is not recorded in the available lifecycle data, so treat this as a last-time-buy or replacement-qualification situation.

Sourcing is through independent distributors who hold surplus inventory or can locate stock from the open market.

Frequently asked questions

What are the specifications of STP23NM60ND?

It is packaged in a through-hole TO-220-3 and operates with a maximum junction temperature of 150°C.