600 V N-channel MOSFET for high-voltage switching
The STP23NM60N is a 600 V N-channel power MOSFET from STMicroelectronics' MDmesh™ II series, built with a multi-drain trench technology that reduces on-resistance and gate charge for fast, efficient switching in high-voltage circuits. The 150 W power dissipation and TO-220-3 through-hole package suit it for heatsink-mounted designs in power supplies, PFC stages, flyback converters, and motor drive auxiliary supplies where 600 V blocking is required.
Sourcing an obsolete MOSFET — what to expect
The 600 V drain-source voltage (Vdss) sets the maximum off-state blocking voltage. Gate charge of 60 nC at 10 V drives the gate-driver sizing.
