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STMicroelectronics STP23NM50N — Discrete Semiconductors

STP23NM50N N-Channel MOSFET, 500V, 17A, MDmesh II TO-220

MPNSTP23NM50N
Active

STMicroelectronics MDmesh™ II series, STP23NM50N, N-Channel MOSFET, 500 V drain-source, 17 A continuous drain at 25°C, 190 mOhm Rds(on) at 8.5 A and 10 V gate drive, 45 nC gate charge, TO-220-3 through-hole package, 150°C junction temperature.

$5.3000Ref. price · indicative, final on quote
STMicroelectronics STP23NM50N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP23NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation125W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs190mOhm @ 8.5A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1330 pF @ 50 V

Product details

190 mOhm on-resistance — what it costs you in heat

At 8.5 A drain current, the 190 mOhm maximum Rds(on) at 10 V gate drive produces about 13.7 W of conduction loss.

Gate drive: 10 V is the sweet spot

The gate threshold voltage maximum is 4 V at 250 µA drain current, so a 5 V gate signal might barely turn it on but won't fully enhance the channel.

Through-hole TO-220 — a serviceable package for production and rework

The TO-220-3 through-hole package is a workhorse for power stages. For rework and repair scenarios, the through-hole format is far easier to replace than a surface-mount D²PAK — a soldering iron and a desoldering wick are enough, no hot-air station required.

No second-source alternate is recorded in the available documentation, so the BOM depends on this single ST order code.

Frequently asked questions

What is the Rds(on) of STP23NM50N?

The maximum on-resistance is 190 mOhm at 8.5 A drain current with 10 V gate drive. At lower gate voltages the Rds(on) increases significantly — the part is specified for 10 V drive.

What is the Vgs threshold of STP23NM50N?

The maximum gate threshold voltage is 4 V at 250 µA drain current. This means a 5 V logic-level gate signal may not fully enhance the channel; a 10 V gate drive is recommended to achieve the rated on-resistance.

What is the equivalent or replacement for STP23NM50N?

No pin-compatible equivalent or replacement is recorded in the available documentation. The part is an active STMicroelectronics product in the MDmesh II series — the base product number STP23 covers the family, but each variant has its own voltage and current rating. For a drop-in substitute, verify the 500 V, 17 A, TO-220 footprint against any candidate.