STMicroelectronics · MDmesh™ II Series
STMicroelectronics MDmesh™ II N-Channel MOSFET, STP22NM60N, 600V Vdss, 16A Id, 220mOhm Rds(on), TO-220-3, Through Hole, Tube.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 125W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 220mOhm @ 8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 44 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 50 V |
The STP22NM60N: Input capacitance Ciss is 1300 pF typ at 50 V drain bias — this sets the gate-drive energy per cycle and the driver's peak current requirement; at 100 kHz the reactive gate current is about 0.26 A RMS.
