The STP22N60DM6: This means the part is still being manufactured and can be specified into new BOMs without near-term supply risk.
Gate-drive reality — 10 V needed for rated Rds(on)
The maximum gate threshold voltage is 4.75 V at 250 µA, which means a 5 V logic-level gate drive will not fully enhance the channel — the Rds(on) will be significantly higher than the datasheet value. Plan for a 10 V gate supply or a dedicated gate-driver IC. Total gate charge is 20.6 nC at 10 V. This is moderate — a standard gate driver with 1 A peak current can switch the gate in about 20 ns, but the 800 pF input capacitance at 100 V drain-source means the Miller plateau will extend the switching time unless the driver has enough current headroom to charge Cgd fast.
Through-hole TO-220 — board-fit and thermal integration
Housed in the TO-220-3 through-hole package (supplier device package TO-220), this is a standard power MOSFET footprint with a metal tab for heatsink mounting. The through-hole leads suit wave-soldering or hand-soldering and provide good mechanical retention in high-vibration environments when bolted down. The wide temperature margin allows for derating the drain current at elevated case temperatures — a common requirement in sealed enclosures or under-hood applications.