STMicroelectronics FDmesh™ II N-Channel MOSFET, 600 V Vdss, 17 A Id, 220 mOhm Rds(on) at 10 V, TO-220-3, Through Hole.
| Parameter | Value |
|---|---|
| Series | FDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 17A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 220mOhm @ 8.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 50 V |
The STP21NM60ND: TO-220-3 through-hole package.
Buyers should evaluate a pin-compatible alternative for new designs or for production continuity if the surplus channel tightens.
600 V Vdss, 17 A Id at 25°C, 220 mOhm Rds(on) at 10 V, 60 nC gate charge.
Yes, the STP21NM60ND is listed as Obsolete. STMicroelectronics has discontinued production. No official replacement part number is recorded. For existing designs, the part can be sourced through surplus and broker channels.
FDmesh™ II is STMicroelectronics' proprietary fast-recovery diode mesh technology for power MOSFETs. It provides a low reverse-recovery charge (Qrr) body diode, which reduces switching losses and EMI in bridge topologies like half-bridge and full-bridge converters.