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STMicroelectronics STP20NM65N — Discrete Semiconductors

STP20NM65N N-Channel MOSFET, 650 V, 15 A, TO-220, Obsolete

MPNSTP20NM65N
Obsolete

STMicroelectronics STP20NM65N, MDmesh™ II N-Channel MOSFET, 650 V Vdss, 15 A Id, 270 mΩ Rds(on) at 10 V, TO-220-3 through-hole package.

STMicroelectronics STP20NM65N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP20NM65N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation125W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs270mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1280 pF @ 50 V

Product details

Obsolete — sourcing for sustainment programs

650 V, 15 A — the switching power sweet spot

The STP20NM65N is an N-channel power MOSFET built on ST's MDmesh™ II technology, a vertical structure that balances low on-resistance with fast switching for high-voltage applications. Gate charge is 44 nC at 10 V, and input capacitance measures 1280 pF at 50 V Vds, giving a figure of merit (Qg × Rds(on)) around 11.9 nC·Ω that is competitive for its voltage class. The TO-220-3 through-hole package (supplier device package TO-220) allows straightforward heatsink attachment with a single screw. Maximum power dissipation is 125 W at case temperature, and the junction temperature rating is 150°C.

This MOSFET is sized for the 100–500 W range of off-line power converters, PFC pre-regulators, and DC-DC stages where 650 V blocking margin is needed for 240 VAC rectified rails (≈380 VDC) plus switching overshoot. The 270 mΩ Rds(on) keeps conduction losses manageable at 7–10 A RMS. It is not suited for low-voltage (<100 V) synchronous rectification or battery-management circuits where a 30–100 V device with lower Rds(on) would be more efficient.

Frequently asked questions

Is STP20NM65N obsolete and what is the replacement?

Yes, the STP20NM65N is obsolete. For existing designs, the part can be sourced through independent distribution against an RFQ. A cross-reference search for a pin-compatible alternative should be evaluated on a per-design basis, considering the 650 V, 15 A, 270 mΩ ratings and TO-220 package.

What are the cross-reference equivalents for STP20NM65N?

Any equivalent must match the 650 V Vdss, 15 A Id, 270 mΩ Rds(on) at 10 V, and TO-220-3 footprint. Evaluate candidates from the same voltage and current class — for example, parts from the MDmesh™ series or competing 650 V N-channel families — on a per-design basis.