STMicroelectronics MDmesh™ N-Channel MOSFET, 600 V Vdss, 20 A Id, 290 mOhm Rds(on) at 10 A, 10 V, TO-220-3 Full Pack, Through Hole, 45 W power dissipation.
| Parameter | Value |
|---|---|
| Series | MDmesh™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 290mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 54 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1500 pF @ 25 V |
The STP20NM60FP: The 290 mOhm maximum on-resistance at 10 A, 10 V gate drive sets the conduction loss floor for a 600 V-class device.
The TO-220 Full Pack (TO-220FP) package has a fully isolated metal tab.
The part is in the MDmesh™ series, a mature ST power MOSFET platform, so the supply channel is stable.
The STP20NM60FP is the full-pack (isolated tab) variant of the STP20NM60, which uses the standard TO-220 (non-isolated) package. The electrical ratings — 600 V Vdss, 20 A Id, 290 mOhm Rds(on) — are the same. The FP version adds the moulded full-pack isolation, so the mounting hole pattern and heatsink interface differ. Pin compatibility is the same three-lead TO-220 footprint, but the tab is electrically isolated on the FP, so the heatsink does not need an insulating pad. Verify the mechanical fit in your enclosure before substituting.