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STMicroelectronics STP20NM60FD — Discrete Semiconductors

ST STP20NM60FD N-Channel MOSFET, 600V, 20A, TO-220

MPNSTP20NM60FD
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STMicroelectronics FDmesh™ N-Channel MOSFET, STP20NM60FD, 600V Vdss, 20A Id, 290mOhm Rds(on) @ 10V, TO-220-3, Through Hole, -65°C~150°C TJ.

$6.5700Ref. price · indicative, final on quote
STMicroelectronics STP20NM60FD datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP20NM60FD specifications
ParameterValue
SeriesFDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation192W (Tc)
Operating temperature-65°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs290mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs37 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1300 pF @ 25 V

Product details

What this 600 V, 20 A N-channel MOSFET is for

The STP20NM60FD: The FDmesh technology is ST's fast-recovery body-diode variant, which reduces reverse-recovery charge and ringing when the MOSFET's body diode conducts in a bridge leg — a common failure point in half-bridge and full-bridge converters.

The 600 V Vdss gives you about 100 V of derating margin against a 400 V DC bus (rectified 230 VAC), which is the standard practice for reliable offline supplies. Gate charge is 37 nC at 10 V.

Package and mounting — TO-220 through-hole

The STP20NM60FD comes in a standard TO-220-3 through-hole package. The tab is electrically live, so an insulating pad and bushing are required if the heatsink is grounded.

Frequently asked questions

What is the Vgs threshold of STP20NM60FD?

The maximum gate threshold voltage is 5 V at 250 µA drain current. Typical parts turn on lower, but the 5 V max ensures a 10 V gate drive fully enhances the device.