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STMicroelectronics STP20NM60 — Discrete Semiconductors

STP20NM60 MOSFET, N-Ch 600V 20A TO-220, MDmesh

MPNSTP20NM60
Active

STMicroelectronics MDmesh™ series, STP20NM60, N-Channel MOSFET, 600 Vdss, 20 A Id, 290 mOhm Rds(on) at 10 Vgs, TO-220-3 through-hole package.

$6.1400Ref. price · indicative, final on quote
STMicroelectronics STP20NM60 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP20NM60 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation192W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs290mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 25 V

Product details

600 V, 20 A — the MDmesh™ power switch for your BOM

The STP20NM60: Maximum on-resistance is 290 mOhm at 10 A, 10 V gate drive. The 600 V drain-source rating provides headroom for rectified DC bus voltages. The TO-220-3 through-hole package means you can heatsink it with a standard clip or screw mount, and it is field-replaceable with a soldering iron — no hot-air station needed.

The 192 W maximum power dissipation rating can handle the channel dissipation with an adequate heatsink. Gate charge is 54 nC at 10 V — a moderate figure that keeps the drive current requirement manageable for most PWM controllers and dedicated gate drivers.

Frequently asked questions

What is the Rds(on) of STP20NM60?

Maximum on-resistance is 290 mOhm at 10 A drain current with 10 V gate drive. That is the number to use for worst-case conduction loss calculations.