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STMicroelectronics STP20NM50FD — Discrete Semiconductors

STP20NM50FD N-Channel MOSFET, 500 V, 20 A, TO-220

MPNSTP20NM50FD
Active

STMicroelectronics FDmesh™ N-Channel MOSFET, STP20NM50FD, 500 Vdss, 20 A continuous drain (Tc), 250 mOhm Rds(on) at 10 V, 53 nC gate charge, TO-220-3 through-hole package, -65°C to 150°C junction temperature.

$6.7200Ref. price · indicative, final on quote
STMicroelectronics STP20NM50FD datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP20NM50FD specifications
ParameterValue
SeriesFDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation192W (Tc)
Operating temperature-65°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs250mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1380 pF @ 25 V

Product details

500 V, 20 A N-Channel MOSFET in TO-220 — FDmesh fast-recovery diode

Packaged in a through-hole TO-220-3, it delivers 192 W maximum power dissipation. The FDmesh technology integrates a fast-recovery body diode, which reduces reverse-recovery charge in bridge topologies such as half-bridge and full-bridge converters.

Input capacitance is 1380 pF at 25 V drain-source, a figure to consider when sizing the gate-drive source impedance for rise-time control.

STMicroelectronics lists the STP20NM50FD as Active. For BOM planning, the active status removes the supply-risk flag that obsolete or NRND parts carry.

Frequently asked questions

What is the Vgs threshold of STP20NM50FD?

Maximum gate threshold voltage is 5 V at 250 µA drain current.