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STMicroelectronics STP20NM50 — Discrete Semiconductors

STP20NM50 MOSFET N-Ch 500V 20A TO-220, MDmesh™

MPNSTP20NM50
Active

STMicroelectronics MDmesh™ STP20NM50, N-Channel MOSFET, 500 Vdss, 20 A continuous drain, 250 mOhm Rds(on) at 10 V, 56 nC gate charge, TO-220-3 through-hole, -65 to 150 °C operating junction.

$5.6800Ref. price · indicative, final on quote
STMicroelectronics STP20NM50 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP20NM50 specifications
ParameterValue
SeriesMDmesh™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation192W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs250mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1480 pF @ 25 V

Product details

500 V, 20 A N-channel — MDmesh™ for offline power stages

Actual on-resistance increases with temperature — the normalised curve in the datasheet shows roughly a 1.5× multiplier at 125 °C junction, so the conduction loss at full load and high ambient is closer to 375 mOhm. The 56 nC total gate charge at 10 V means a standard 1 A gate driver can switch this FET at about 18 kHz before the average gate-drive current exceeds 1 A; above that frequency, a higher-current driver or a gate-resistor trade-off is needed.

TO-220-3 — through-hole mounting and heatsink interface

The TO-220-3 through-hole package has a metal tab for heatsink attachment with a single M3 screw.

Frequently asked questions

What is the Rds(on) of STP20NM50?

250 mOhm maximum at Vgs=10 V and Id=10 A, 25 °C junction. The value rises with junction temperature — expect about 375 mOhm at 125 °C junction.