STMicroelectronics STP20NF06, STripFET™ II N-Channel MOSFET, 60 V drain-to-source voltage, 20 A continuous drain current, 70 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 60W (Tc) |
| Operating temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 70mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 400 pF @ 25 V |
Input capacitance is 400 pF at 25 V drain-to-source, a moderate figure that does not demand an aggressive gate driver.
Maximum power dissipation is 60 W at the case, which requires a heatsink for continuous operation above a few watts. The junction-to-case thermal path is the limiting factor; in practice, derate the current based on the expected case temperature and the Rds(on) thermal coefficient.
No official successor is listed by STMicroelectronics. For a pin-compatible alternative, look for a TO-220 N-channel MOSFET with a 60 V drain-to-source voltage, 20 A continuous drain current, and 70 mOhm or lower Rds(on) at 10 V gate drive. Parts like the STP20NF06FP or other STripFET™ II variants may be considered, but verify the gate threshold, package, and thermal ratings against your specific application.
The evidence does not explicitly state RoHS compliance. The part is listed as a standard MOSFET in a through-hole package; many STMicroelectronics parts of this era are RoHS-compliant, but confirm with the supplier at quote time.