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STMicroelectronics STP20NE06L — Discrete Semiconductors

STP20NE06L STMicro N-Channel MOSFET, 60V 20A TO-220

MPNSTP20NE06L
Obsolete

STMicroelectronics STP20NE06L N-Channel MOSFET, STripFET™ series, 60 V drain-source, 20 A continuous drain, 70 mOhm Rds(on), TO-220-3 through-hole package.

$1.4900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP20NE06L specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation70W (Tc)
Operating temperature175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs70mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 25 V

Product details

STMicroelectronics has marked the STP20NE06L as Obsolete. This means the manufacturer no longer produces the part, and no official last-time-buy window remains open. Quantities are lot-specific and confirmed at RFQ; no stock-holding claim is made here.

Key ratings and what they mean for the BOM

This places it in the 60 V / 20 A class — a common sweet spot for low-to-medium power DC-DC converters, load switches, and motor-drive output stages in 12 V and 24 V systems. Maximum on-resistance is 70 mOhm at 10 A gate drive of 10 V. At 20 A, the conduction loss is I²R = 28 W — well within the 70 W power dissipation limit at the case, but the junction-to-case thermal path must be managed with a heatsink for sustained high-current operation. Gate charge is 20 nC at 5 V drive. This is a modest charge — a standard gate driver or even a logic-level output can switch it at moderate frequencies without excessive drive losses. The 800 pF input capacitance at 25 V drain confirms the switching speed is suitable for PWM up to the low tens of kHz.

Housed in a TO-220-3 through-hole package. The tab is the drain terminal; the centre pin is drain, left gate, right source when viewed with the label facing you. The metal tab must be electrically isolated or connected to the drain potential in the circuit. Operating junction temperature range extends to 175 °C — this is the standard maximum for silicon power MOSFETs and allows headroom in high-ambient or poorly-ventilated enclosures.