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STMicroelectronics STP20N90K5 — Discrete Semiconductors

STP20N90K5 MOSFET N-CH 900V 20A TO-220, 250mOhm Rds(on)

MPNSTP20N90K5
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STMicroelectronics MDmesh™ K5 series, STP20N90K5, N-Channel MOSFET, 900V Vdss, 20A Id, 250mOhm Rds(on) at 10A 10V, 40nC Qg, TO-220-3, -55°C to 150°C.

$6.7900Ref. price · indicative, final on quote
STMicroelectronics STP20N90K5 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP20N90K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs250mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 100 V

Product details

900 V, 20 A — where this MOSFET fits

The STP20N90K5: The 900 V Vdss suits high-voltage offline power supplies, flyback converters, PFC stages, and auxiliary power circuits in industrial and telecom equipment.

Conduction and switching — the numbers that matter

Gate charge totals 40 nC at 10 V. Input capacitance is 1500 pF at 100 V drain bias — this is the dominant term in the driver's dynamic load at turn-on. The gate threshold voltage is 5 V maximum at 100 µA, so a 10 V drive rail is the safe choice to guarantee the lowest Rds(on) across the full operating temperature range.

Through-hole TO-220-3 package, supplier device package TO-220. The exposed metal tab is the drain — it must be electrically isolated from the heatsink or the heatsink must be at drain potential.

ROHS3 compliant. The base product number is STP20, so variant options (different Rds(on) or voltage ratings in the same package) share the same footprint.

Frequently asked questions

What is the Rds(on) of STP20N90K5?

Maximum Rds(on) is 250 mOhm at 10 A drain current with 10 V gate drive. This is the spec to use for worst-case conduction loss calculations at 25°C junction; expect the on-resistance to increase by roughly 50% at 125°C junction per typical MOSFET behaviour.