600 V, 13 A N-channel MOSFET in TO-220
STP20N60M2-EP is rated for a drain-to-source voltage of 600 V and a continuous drain current of 13 A at 25°C case temperature, with a maximum power dissipation of 110 W.
Gate drive and voltage ratings
The gate-source voltage is limited to ±25 V, and the recommended drive voltage for achieving minimum Rds(on) is 10 V. This makes the part compatible with standard 10 V gate-drive circuits used in offline converters and PFC stages. The ±25 Vgs max provides good margin against ringing on the gate node in hard-switched topologies.
The through-hole leads suit manual assembly or wave-solder processes, and the tab is electrically connected to the drain.