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STMicroelectronics STP20N20 — Discrete Semiconductors

STP20N20 N-Channel MOSFET, 200 V, 18 A, TO-220, Obsolete

MPNSTP20N20
Obsolete

STMicroelectronics STripFET™ II STP20N20, N-Channel MOSFET, 200 Vdss, 18 A Id, 125 mOhm Rds(on), TO-220-3, -50°C to 150°C Tj.

STMicroelectronics STP20N20 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP20N20 specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation90W (Tc)
Operating temperature-50°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs125mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds940 pF @ 25 V

Product details

200 V, 18 A N-channel in a TO-220 — a mid-voltage power switch

Typical applications include switched-mode power supplies, motor drives, and DC-DC converters where a 200 V blocking voltage and moderate current handling are required.

On-resistance and gate drive — what 125 mOhm and 39 nC mean for your design

The drive voltage for rated Rds(on) is 10 V, so a standard 12 V gate-drive rail or a dedicated gate-driver IC is expected; logic-level 5 V drive will not achieve the specified on-resistance. Gate charge is 39 nC at 10 V, and input capacitance is 940 pF at 25 V drain bias — this combination means a modest gate-driver output stage (1 A to 2 A peak) can switch the device in the tens-of-kilohertz range without excessive crossover loss.

Obsolete — the sourcing reality for STP20N20

Frequently asked questions

Where can I buy STP20N20?

STP20N20 is sourced through independent distribution. Submit an RFQ for current availability and pricing, which are confirmed at quote time. No stock or price figures are listed on this page.