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STMicroelectronics STP200NF04L — Discrete Semiconductors

STMicroelectronics STP200NF04L

MPNSTP200NF04L
Obsolete
$1.8000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP200NF04L specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.8mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs90 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds6400 pF @ 25 V