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STMicroelectronics STP200N6F3 — Discrete Semiconductors

STP200N6F3 N-Channel MOSFET, 60 V, 3.9 mOhm, TO-220

MPNSTP200N6F3
Obsolete

STMicroelectronics STripFET STP200N6F3, N-Channel MOSFET, 60 V Vdss, 120 A Id, 3.9 mOhm Rds(on) at 10 V, TO-220-3, -55°C to 175°C.

STMicroelectronics STP200N6F3 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP200N6F3 specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.9mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs100 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6800 pF @ 25 V

Product details

60 V, 3.9 mOhm — the conduction-loss floor for high-current switching

The 120 A continuous drain rating at 25°C case temperature and 330 W maximum power dissipation are achievable only with adequate heatsinking — the TO-220 package's junction-to-case thermal path is the limiting factor, not the silicon.

Parametric profile for design-in verification

A 100 nC gate charge at 100 kHz switching draws 10 mA average from the gate driver, well within the capability of most dedicated MOSFET drivers. The threshold voltage is specified at 4 V maximum with 250 µA drain current, and the recommended drive voltage for minimum on-resistance is 10 V. The ±20 V gate-source maximum leaves headroom for gate-drive overshoot in hard-switching topologies.

Frequently asked questions

What is the replacement for STP200N6F3?

No official successor or cross-reference is listed by STMicroelectronics. For a pin-compatible alternative, evaluate other N-channel MOSFETs in the STripFET family with similar 60 V, 120 A, TO-220 ratings — but no direct drop-in replacement is documented.