Device identity and key ratings
The STP200N4F3: On-resistance is specified at 4.4mOhm maximum with 80A drain current and 10V gate drive — the 10V drive voltage matches the rated Rds(on) condition. Total gate charge is 75 nC at 10V, input capacitance 5100 pF at 25V drain bias.
Package and thermal profile
Housed in a TO-220-3 through-hole package with the standard TO-220 supplier device footprint. The large copper tab provides a low thermal resistance path to the heatsink — maximum power dissipation is 300W at case temperature. The wide temperature margin means derating above 25°C follows the normal Rds(on) temperature coefficient curve.
Lifecycle reality — obsolete, sourced to order
STMicroelectronics has marked the STP200N4F3 as obsolete. Available through independent distribution channels on a quoted-to-order basis. The date-code and lot traceability are confirmed at RFQ; the TO-220 body and laser-etched marking are straightforward to authenticate against ST's known marking standards.