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STMicroelectronics STP19NM65N — Discrete Semiconductors

STP19NM65N N-Channel MOSFET, 650 V, 15.5 A, MDmesh II

MPNSTP19NM65N
Obsolete

STMicroelectronics MDmesh™ II series, N-Channel MOSFET, 650 V Vdss, 15.5 A Id, 270 mOhm Rds(on) @ 7.75 A, 10 V, 55 nC Qg @ 10 V, TO-220-3, Through Hole, 150°C TJ.

STMicroelectronics STP19NM65N datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STP19NM65N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15.5A (Tc)
Power dissipation150W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs270mOhm @ 7.75A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1900 pF @ 50 V

Product details

650 V MDmesh II — switching converter workhorse

The STP19NM65N is an N-channel MOSFET rated at 650 V drain-source and 15.5 A continuous drain current.

270 mOhm on-resistance — conduction loss budget

55 nC gate charge — driver sizing

Total gate charge is 55 nC at 10 V.

ST lists the STP19NM65N as obsolete. Availability and pricing are quoted per RFQ against the specific quantity and date-code requirements. The TO-220 package is through-hole, so the part is straightforward to hand-assemble or rework, which matters when the sourced lot may span multiple date codes.

Frequently asked questions

What is the replacement for STP19NM65N?

No official replacement or successor order code is listed by STMicroelectronics. For a drop-in functional equivalent, look at other MDmesh II or MDmesh V parts in the same 650 V, ~15 A, TO-220 class — but verify pin-compatibility and gate charge characteristics against your specific drive circuit. The STP19NM65N is obsolete, so any replacement will require a design review of the gate drive voltage and switching losses.