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STMicroelectronics STP190N55LF3 — Discrete Semiconductors

STP190N55LF3 N-Channel MOSFET, 55 V, 120 A, 3.7 mOhm

MPNSTP190N55LF3
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STMicroelectronics STripFET™ STP190N55LF3, N-Channel MOSFET, 55 V Vdss, 120 A Id, 3.7 mOhm Rds(on) at 30 A, 10 V, TO-220-3, -55°C to 175°C.

$5.3500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP190N55LF3 specifications
ParameterValue
SeriesSTripFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation312W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±18V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs3.7mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds6200 pF @ 25 V

Product details

What this N-channel MOSFET delivers in a power stage

The TO-220-3 through-hole package suits boards where a discrete heatsink or forced airflow is available.

RDS(on) and gate drive — sizing the gate driver and estimating loss

For lowest conduction loss, drive with 10 V. The gate charge is 80 nC at 5 V, which is moderate for a 120 A device — a standard gate driver IC can switch it at tens of kilohertz without excessive drive current.

Thermal and current derating — what the numbers mean on your board

The 120 A continuous rating is at 25°C case temperature with the case held at 25°C — a lab condition. In a real enclosure with a heatsink, the usable current depends on the thermal resistance of the heatsink and the ambient temperature. The maximum power dissipation is 312 W at the case, but that figure assumes an infinite heatsink. For a 55 V part, the 120 A rating gives headroom for inrush and overload, but the steady-state current will be limited by the junction temperature staying under 175°C.

It is a current-production part available through standard distribution. For BOM planning, there is no single-source risk from obsolescence.

Frequently asked questions

Is STP190N55LF3 RoHS compliant?

The evidence does not explicitly state RoHS compliance, but STMicroelectronics typically marks RoHS compliance on the datasheet and product label. Verify the specific date/lot code against the ST RoHS declaration for your region.