STMicroelectronics STP18NM60N — Discrete Semiconductors
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RoHS Compliant · Lead-Free EIA-481 Standard
STMicroelectronics / Discrete Semiconductors

STMicroelectronics STP18NM60N MOSFET

MPN STP18NM60N
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

STMicroelectronics MDmesh™ II N-Channel MOSFET, STP18NM60N, 600V Vdss, 13A Id, 285mOhm Rds(on), TO-220-3, Tube.

In Stock: 102 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$2.15 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$2.15
10+ pcs
$1.96
50+ pcs
$1.84
100+ pcs
$1.72
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$2.15 / ea

102 in stock — maximum per order · 3–4 days lead time

$1.96 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-220-3
Output / Current 600 V

Full Technical Specifications

16 Parameters
STP18NM60N specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs285mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 50 V
Series Sibling Variants

STMicroelectronics MDmesh™ II Series Models

Sibling variants, package options, and speed/density grades in this STMicroelectronics semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

Technical Details & Description

600 V, 13 A N-channel in TO-220

The STP18NM60N: Packaged in a through-hole TO-220-3, it targets high-voltage switching applications where the 285 mOhm maximum on-resistance at 6.5 A and 10 V gate drive keeps conduction losses manageable.

Gate drive and switching parametrics

The device requires a 10 V gate drive for the lowest Rds(on), with an absolute maximum Vgs of ±25 V. Total gate charge is 35 nC at 10 V — this sets the drive current needed at the target switching frequency; a 100 kHz hard-switching application draws about 3.5 mA from the gate driver, well within the capability of most dedicated MOSFET drivers. Input capacitance (Ciss) is 1000 pF at 50 V Vds, which together with the gate charge defines the switching energy.

Frequently asked questions

How do I get current pricing and availability for STP18NM60N?

Submit an RFQ through this listing.

What compliance documentation does STMicroelectronics provide for STP18NM60N?

The STP18NM60N is ROHS3 compliant. Standard documentation includes the datasheet, RoHS certificate of compliance, and material declaration; these are available on request.

STP18NM60N
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