600 V, 13 A N-channel in TO-220
The STP18NM60N: Packaged in a through-hole TO-220-3, it targets high-voltage switching applications where the 285 mOhm maximum on-resistance at 6.5 A and 10 V gate drive keeps conduction losses manageable.
Gate drive and switching parametrics
The device requires a 10 V gate drive for the lowest Rds(on), with an absolute maximum Vgs of ±25 V. Total gate charge is 35 nC at 10 V — this sets the drive current needed at the target switching frequency; a 100 kHz hard-switching application draws about 3.5 mA from the gate driver, well within the capability of most dedicated MOSFET drivers. Input capacitance (Ciss) is 1000 pF at 50 V Vds, which together with the gate charge defines the switching energy.
