STMicroelectronics MDmesh V series, STP18N65M5, N-Channel MOSFET, 650 V Vdss, 15 A continuous drain, 220 mOhm Rds(on) at 10 V, 31 nC gate charge, TO-220-3 through-hole, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 220mOhm @ 7.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1240 pF @ 100 V |
That is the figure to use for worst-case conduction loss in the thermal model; the typical value will be lower, but the 220 mOhm ceiling sets the heatsink requirement.
For designs where switching loss dominates, the low Qg keeps the crossover time short.
Maximum Rds(on) is 220 mOhm at 7.5 A drain current with 10 V gate drive.
Continuous drain current is 15 A at 25 °C case temperature.